Author/Authors :
Lechner، نويسنده , , P. and Fiorini، نويسنده , , C. and Hartmann، نويسنده , , R. and Kemmer، نويسنده , , J. and Krause، نويسنده , , N. and Leutenegger، نويسنده , , P. and Longoni، نويسنده , , A. and Soltau، نويسنده , , H. and Stِtter، نويسنده , , D. and Stِtter، نويسنده , , R. and Strüder، نويسنده , , L. and Weber، نويسنده , , U.، نويسنده ,
Abstract :
Silicon Drift Detectors (SDDs) combine a large sensitive area with a small value of the output capacitance and are therefore well suited for high resolution, high count rate X-ray spectroscopy. The low leakage current level obtained by the elaborated processing technology makes it possible to operate them at room temperature or with moderate cooling. A brief description of the device principle is followed by the presentation of first results of a new production of large area SDDs with external electronics. Performance and applications of the already established SDDs with on-chip amplification are summarised. Various shapes of Multichannel Drift Detectors are introduced as well as their use in new experiments like X-ray holography and in new systems like an Anger camera for γ-ray imaging.
Keywords :
Silicon drift detector , X-ray detector , ?-camera , X-ray spectroscopy