Author/Authors :
Darmo، نويسنده , , Juraj and Dubeck?، نويسنده , , Franti?ek and Zat’ko، نويسنده , , Bohum??r and Ne?as، نويسنده , , Vladim??r and Pelfer، نويسنده , , Pier Giovanni، نويسنده ,
Abstract :
A gamma-ray detection performance of the semi-insulating (SI) GaAs detectors was studied in the temperature range 210–300 K. The reduction of detector noise was observed as expected, as well as a decrease of the operation temperature-induced changes in the charge collection process that are strongly material dependent. The most pronounced improvement in the collection process was observed for chromium-doped SI GaAs.
