Deep-level transient spectroscopy studies of silicon detectors after 24 GeV proton irradiation and 1 MeV neutron irradiation

Deep-Level Transient Spectroscopy (DLTS) has been used to investigate the defects in high-resistivity silicon detectors after 1×1011 proton cm−2 irradiation at room temperature. The (Ec−0.43±0.02) eV peak is seen in all materials after irradiation by neutrons or protons and has been investigated carefully. Annealing experiments show that it consists of four individual defects, one of which is the single negative divacancy. Two defects (Ec−0.35±0.02) eV and (Ec−0.45±0.03) eV anneal out at 70°C. A level (Ev+0.20±0.02) eV was also observed to anneal out at about 60°C in a p-type epitaxial diode after neutron irradiation. We propose that these levels can be identified as to be V3+ (Ev+0.20±0.01) eV, V3− (Ec−0.45±0.03) eV and V3−− (Ec−0.35±0.02) eV charge states of the trivacancy, V3. A defect at (Ec−0.37±0.02) eV annealed out at 170°C and may be the four vacancy, V4.