Observation of an energy dependence of the radiation damage on standard and oxygenated silicon diodes by 16, 21, and 27 MeV protons

First measurement of the energy dependence of the radiation damage induced by low-energy protons on standard and oxygen enriched diodes is presented. The current damage constant α is always insensitive to the oxygen content and increases for lower energy protons, whereas the acceptor creation rate β for both types of diodes slowly decreases for lower proton energies, this effect being amplified when the fluences are normalized to their 1 MeV neutron equivalent values. The dependence from the proton energy of the normalized β values is in open disagreement with the currently accepted NIEL hypothesis. Irradiations and measurements have been performed at the INFN Laboratorio Nazionale di Legnaro.