Author/Authors :
F. and Ullلn، نويسنده , , M. C. WILDER and D. P. TELIONIS، نويسنده , , M. and Spieler، نويسنده , , H. and Spencer، نويسنده , , E. and Rescia، نويسنده , , S. and Newcomer، نويسنده , , F.M. and Martinez-McKinney، نويسنده , , F. and Kononenko، نويسنده , , W. and Grillo، نويسنده , , A.A. and Dيez، نويسنده , , S.، نويسنده ,
Abstract :
A new comprehensive method for assessing Enhanced Low Dose Rate Sensitivity (ELDRS) in bipolar transistors to be used for very high total doses is applied to an advanced SiGe HBT technology for its use in the ATLAS Upgrade at CERN. Conventional ELDRS assessment methods are combined with switched experiments (high/low dose rate), providing a way to verify the presence of ELDRS at very high doses in reasonable irradiation time. Additionally, an anomalous damage recovery has been found in transistors with saturated damage after further low dose rate irradiations.
Keywords :
Radiation effect , SiGe HBT transistors , ATLAS upgrade , ELDRS , Switched experiments , Bipolar transistor
