Author/Authors :
Larson، نويسنده , , N. and Liddick، نويسنده , , S.N. and Bennett، نويسنده , , M. and Bowe، نويسنده , , A. and Chemey، نويسنده , , A. and Prokop، نويسنده , , C. and Simon، نويسنده , , A. and Spyrou، نويسنده , , A. and Suchyta، نويسنده , , S. J. Quinn، نويسنده , , S.J. and Tabor، نويسنده , , S.L. and Tai، نويسنده , , P.L. and Tripathi، نويسنده , , Vandana and VonMoss، نويسنده , , J.M.، نويسنده ,
Abstract :
Beta-decay spectroscopy experiments are limited by the detection efficiency of ions and electrons in the experimental setup. While there is a variety of different experimental setups in use for beta-decay spectroscopy, one popular choice is silicon double-sided strip detectors (DSSD). The higher Z of Ge and greater availability of thicker detectors as compared to Si potentially offer dramatic increases in the detection efficiency for beta-decay electrons. In this work, a planar GeDSSD has been commissioned for use in beta-decay spectroscopy experiments at the National Superconducting Cyclotron Laboratory (NSCL). The implantation response of the detector and its beta-decay detection efficiency is discussed.
