Title of article
Fabrication of ultra-clean copper surface to minimize field emission dark currents
Author/Authors
Suzuki، نويسنده , , C and Nakanishi، نويسنده , , T and Okumi، نويسنده , , S and Gotou، نويسنده , , T and Togawa، نويسنده , , K and Furuta، نويسنده , , F and Wada، نويسنده , , K and Nishitani، نويسنده , , T and Yamamoto، نويسنده , , M and Watanabe، نويسنده , , J and Kurahashi، نويسنده , , S and Asano، نويسنده , , K and Matsumoto، نويسنده , , H and Yoshioka، نويسنده , , M and Kobayakawa، نويسنده , , H، نويسنده ,
Pages
12
From page
337
To page
348
Abstract
The current from copper electrodes treated by four different types of surface cleaning procedures was measured under DC high field gradient condition. The best results were obtained by using the electrode rinsed with ultra-pure water after diamond turning. A field gradient of 47 MV/m was achieved with dark current at the level of 1 nA, and the microscopic field enhancement factor was estimated to be a very low value of 56. The dark current from this electrode was dependent only on the field gradient at the cathode and not affected by the total voltage applied to the gap. In this case the surface would be covered by a Cu2O layer, which creates few secondary ions by the electron bombardment. On the other hand, a large total voltage effect and a large vacuum increase were observed for the electro-polished electrode. Cu(OH)2, which would be formed at the copper surface during the electro-polishing process, would emit H2O molecules during the electron bombardment.
Journal title
Astroparticle Physics
Record number
2014709
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