Development of radiation-tolerant silicon microstrip sensor for the ATLAS inner tracker at the SLHC

We have established the basic technology for a radiation-tolerant p-type silicon microstrip sensor for the ATLAS inner tracker at the SLHC, manufactured on 6-in. wafers without onset of microdischarge up to 1000 V. In comparison of wafer materials, little advantage was observed in the 6 in. p-type MCZ material to the p-FZ that was available in Japan. The evolution of the charge collection as a function of bias voltage showed that the proton-irradiated samples with apparent lower full depletion voltage collected less charge at saturation than the neutron irradiated samples.