Collected charge of planar silicon detectors after pion and proton irradiations up to 2.2 ×1016 neq cm−2

The planned luminosity upgrade of the Large Hadron Collider at CERN (Super-LHC) will provide a challenging environment for the tracking and vertexing detector systems. Planar, segmented silicon detectors are one of the few radiation tolerant technologies under consideration for use for the Super-LHC tracking detectors in either pixel or strip geometries. In this paper, charge collection measurements are made with planar silicon sensors with 2 different substrate materials (float zone and magnetic Czochralski) and 3 different diode configurations (p+ strip in n-bulk, n+ strip in n-bulk, and n+ strip in p-bulk). e first time, a comparison of the charge collection of these devices will be made after irradiation up to 6 ×1014 neq cm−2 with 280 MeV charged pions, and up to 2.2 ×1016 neq cm−2 with 26 MeV protons. This study covers the expected range of final fluences for the different layers of pixel and microstrip sensors of the ATLAS and CMS experiments at the Super-LHC. These measurements have been carried out using analogue, high-speed (40 MHz) electronics and a Strontium-90 beta source.