Author/Authors :
Angelone، نويسنده , , M. and Pillon، نويسنده , , M. and Faccini، نويسنده , , R. and Pinci، نويسنده , , D. and Baldini، نويسنده , , W. and Calabrese، نويسنده , , R. and Cibinetto، نويسنده , , G. and Cotta Ramusino، نويسنده , , A. and Malaguti، نويسنده , , R. and Pozzati، نويسنده , , M.، نويسنده ,
Abstract :
Radiation hardness tests were performed at the Frascati Neutron Generator on silicon Photo-Multipliers that were made of semiconductor photon detectors built from a square matrix of avalanche photo-diodes on a silicon substrate. Several samples from different manufacturers have been irradiated, integrating up to 7×1010 1-MeV-equivalent neutrons per cm2. Detector performance was recorded during the neutron irradiation, and a gradual deterioration of their properties began after an integrated fluence of the order of 108 1-MeV-equivalent neutrons per cm2 was reached.
