Author/Authors :
Schlosser، نويسنده , , D.M. and Lechner، نويسنده , , P. and Lutz، نويسنده , , G. and Niculae، نويسنده , , A. and Soltau، نويسنده , , H. and Strüder، نويسنده , , David L. and Eckhardt، نويسنده , , R. and Hermenau، نويسنده , , K. and Schaller، نويسنده , , G. and Schopper، نويسنده , , F. and Jaritschin، نويسنده , , O. and Liebel، نويسنده , , A. and Simsek، نويسنده , , A. and Fiorini، نويسنده , , C. and Longoni، نويسنده , , A.، نويسنده ,
Abstract :
To expand the detection efficiency Silicon Drift Detectors (SDDs) with various customized radiation entrance windows, optimized detector areas and geometries have been developed. Optimum values for energy resolution, peak to background ratio (P/B) and high count rate capability support the development. Detailed results on sensors optimized for light element detection down to Boron or even lower will be reported. New developments for detecting medium and high X-ray energies by increasing the effective detector thickness will be presented. Gamma-ray detectors consisting of a SDD coupled to scintillators like CsI(Tl) and LaBr3(Ce) have been examined. Results of the energy resolution for the 137Cs 662 keV line and the light yield (LY) of such detector systems will be reported.
Keywords :
Silicon drift detector (SDD) , X-ray detector , Low X-ray energy , Gamma ray detection , light elements , Hard X-ray , scintillator , Quantum efficiency
