Title of article
Radiation hardness studies on CMOS monolithic pixel sensors
Author/Authors
Battaglia، نويسنده , , Marco and Bisello، نويسنده , , Dario and Contarato، نويسنده , , Devis and Denes، نويسنده , , Peter H. Doering، نويسنده , , Dionisio and Giubilato، نويسنده , , Piero and Sung Kim، نويسنده , , Tae and Mattiazzo، نويسنده , , Serena and Radmilovic، نويسنده , , Velimir and Zalusky، نويسنده , , Sarah، نويسنده ,
Pages
3
From page
425
To page
427
Abstract
This paper presents irradiation studies performed on a CMOS monolithic pixel sensor prototype implementing different optimizations of the pixel cell aimed at a superior radiation tolerance. Irradiations with 200 keV electrons up to a total dose of 1.1 Mrad have been performed in view of the utilization of such a design in Transmission Electron Microscopy (TEM) applications. Comparative irradiations were performed with 29 MeV protons up to a 2 Mrad total dose and with 1–14 MeV neutrons up to fluences in excess of 1013 neq cm−2. Experimental results show an improved performance of pixels designed with Enclosed Layout Transistor (ELT) rules and an optimized layout of the charge collecting diodes.
Keywords
Monolithic active pixel sensors , Radiation tolerance , Silicon pixel detectors
Journal title
Astroparticle Physics
Record number
2015459
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