Title of article
Radiation tolerance of CMOS monolithic active pixel sensors with self-biased pixels
Author/Authors
Deveaux، نويسنده , , M. and Amar-Youcef، نويسنده , , S. and Besson، نويسنده , , I. H. A. W. Claus، نويسنده , , G. and Colledani، نويسنده , , C. and Dorokhov، نويسنده , , M. and Dritsa، نويسنده , , C. and Dulinski، نويسنده , , W. and Frِhlich، نويسنده , , I. and Goffe، نويسنده , , M. and Grandjean، نويسنده , , D. and Heini، نويسنده , , S. and Himmi، نويسنده , , A. and Hu، نويسنده , , C. and Jaaskelainen، نويسنده , , K. and Müntz، نويسنده , , C. and ، نويسنده ,
Pages
4
From page
428
To page
431
Abstract
CMOS monolithic active pixel sensors (MAPS) are proposed as a technology for various vertex detectors in nuclear and particle physics. We discuss the mechanisms of ionizing radiation damage on MAPS hosting the dead time free, so-called self bias pixel. Moreover, we introduce radiation hardened sensor designs which allow operating detectors after exposing them to irradiation doses above 1 Mrad.
Keywords
Monolithic active pixel sensor , CMOS-sensor , Radiation hardness , Pixel sensor , maps
Journal title
Astroparticle Physics
Record number
2015460
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