Title of article
Carrier-loss temperature dependence in liquid-phase epitaxially grown InSb detectors
Author/Authors
Sato، نويسنده , , Yuki and Kanno، نويسنده , , Ikuo، نويسنده ,
Pages
3
From page
646
To page
648
Abstract
We characterize 5.5 MeV alpha particles emitted from 241Am with a liquid-phase epitaxially grown InSb crystal detector at operating temperatures ranging from 5 to 104 K. The pulse height of the energy peak of alpha particles rapidly decreases at temperatures above 40 K. We explain this behavior of the peak channel numbers as a function of temperature using a model of the recombination and trapping of generated electrons and holes.
Keywords
InSb , radiation detector , Carrier recombination
Journal title
Astroparticle Physics
Record number
2015540
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