Carrier-loss temperature dependence in liquid-phase epitaxially grown InSb detectors

We characterize 5.5 MeV alpha particles emitted from 241Am with a liquid-phase epitaxially grown InSb crystal detector at operating temperatures ranging from 5 to 104 K. The pulse height of the energy peak of alpha particles rapidly decreases at temperatures above 40 K. We explain this behavior of the peak channel numbers as a function of temperature using a model of the recombination and trapping of generated electrons and holes.