Title of article
Beam test results of different configurations of deep N-well MAPS matrices featuring in pixel full signal processing
Author/Authors
Paoloni، نويسنده , , E. and Avanzini، نويسنده , , C. and Batignani، نويسنده , , G. and Bettarini، نويسنده , , S. and Bosi، نويسنده , , F. and Calderini، نويسنده , , G. and Casarosa، نويسنده , , G. and Ceccanti، نويسنده , , M. Angela Cenci، نويسنده , , R. and Cervelli، نويسنده , , A. and Crescioli، نويسنده , , F. and Dell’Orso، نويسنده , , M. Cristina Forti، نويسنده , , F. and Giannetti، نويسنده , , P. and Giorgi، نويسنده , , M.A. and Lusia، نويسنده ,
Pages
4
From page
234
To page
237
Abstract
We report on further developments of our proposed design approach for a full in-pixel signal processing chain of deep N-well monolithic active pixel sensor, by exploiting the triple well option of a CMOS 130 nm process. Two different geometries of the collecting electrode (namely “Apsel 3T1 M1” and “Apsel 3T1 M2”) was implemented to compare their charge collection efficiency. The results of the characterization of the various versions of pixel matrices with a pion beam of 120 GeV/c at the SPS H6 CERN facility will be presented. The performances of an “Apsel 3T1” chip irradiated with a dose up to 10 Mrad (Co60) was also measured. Comparison will be presented among the irradiated and the new chip showing the impact of radiation damages on tracking efficiencies.
Keywords
Monolithic active pixels sensors , Vertex detectors
Journal title
Astroparticle Physics
Record number
2015650
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