Effects of 3 MeV protons irradiation on the electrical properties of silicon detectors

It is well known that upon radiation exposure, silicon junction detectors change in their electrical properties. The main degradation effects are the increase of the reverse current and the carrier trapping probability, which could lead to charge collection deficiency in the signal response. In this work, we study the radiation effects in Al/Si(n) surface barrier detectors irradiated by 3 MeV protons at fluence about 1013 p/cm2. In attempt to recover the detector properties, we performed a thermal annealing in the range 150°C–550°C/30 min.