A CMOS compatible Microbulk Micromegas-like detector using silicon oxide as spacer material

We present a new Micro Pattern Gaseous Detector (MPGD) fabricated with nonpolymeric materials. The device structure is similar to a Microbulk Micromegas design, consisting of a punctured metal grid supported by a continuous perforated insulating structure. In this detector, the supporting structure is made out of silicon oxide. Devices were tested in He/iC4H10 (80/20) and Ar/iC4H10 (80/20) gas mixtures under 55Fe irradiation. Gas gain of 20,000 and energy resolution below 13% FWHM were achieved. The CMOS compatibility of the fabrication process has been studied in Timepix chips as well as individual 0.13-μm technology CMOS transistors. Complete detectors have been fabricated on top of Timepix chips. In an Ar/iC4H10 (80/20) gas mixture 55Fe decay events were recorded operating the Timepix chip in 2D readout mode.