Author/Authors :
Gorfine، نويسنده , , Grant and Hoeferkamp، نويسنده , , Martin and Santistevan، نويسنده , , Geno and Seidel، نويسنده , , Sally، نويسنده ,
Abstract :
Capacitance measurements have been made on silicon pixel sensors of types n+-on-n, p+-on-n, and n+-on-p. The arrays test a variety of implant and gap widths, and the n+-on-n devices test several p-stop designs. The measurements examine inter-pixel and backplane contributions and include studies of temperature dependence. Measurements were made before and after irradiation with fluences relevant to LHC experiments and Fermilab Tevatron Run 2.
