Title of article :
Charge compensation in irradiated semiconductor devices using high-resistivity field plates
Author/Authors :
Parker، نويسنده , , Sherwood and Kenney، نويسنده , , Christopher، نويسنده ,
Abstract :
A field-plate structure using a high-resistivity material is described. As with other field plates, it can be used to compensate trapped charges in semiconductor devices, including radiation detectors, but because little current flows through it during the time a pulse is present on the signal electrodes, it does not significantly increase the effective capacitance between signal electrodes or other structures near the plates.
Keywords :
Sensors , Charge compensation , Polysilicon resistors , Radiation damage , Field plates , Oxide trapped charge , Semiconductor radiation detectors
Journal title :
Astroparticle Physics
