Title of article
Charge compensation in irradiated semiconductor devices using high-resistivity field plates
Author/Authors
Parker، نويسنده , , Sherwood and Kenney، نويسنده , , Christopher، نويسنده ,
Pages
7
From page
101
To page
107
Abstract
A field-plate structure using a high-resistivity material is described. As with other field plates, it can be used to compensate trapped charges in semiconductor devices, including radiation detectors, but because little current flows through it during the time a pulse is present on the signal electrodes, it does not significantly increase the effective capacitance between signal electrodes or other structures near the plates.
Keywords
Sensors , Charge compensation , Polysilicon resistors , Radiation damage , Field plates , Oxide trapped charge , Semiconductor radiation detectors
Journal title
Astroparticle Physics
Record number
2015944
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