Author/Authors :
Inbal Ayzenshtat، نويسنده , , G.I. and Bakin، نويسنده , , N.N. and Budnitsky، نويسنده , , D.L. and Drugova، نويسنده , , E.P. and Germogenov، نويسنده , , V.P. and Khludkov، نويسنده , , S.S and Koretskaya، نويسنده , , O.B and Okaevich، نويسنده , , L.S. and Porokhovnichenko، نويسنده , , L.P. and Potapov، نويسنده , , A.I. and Smith، نويسنده , , K.M. and Tolbanov، نويسنده , , O.P. and Tyazhev، نويسنده , , A.V. and Vi، نويسنده ,
Abstract :
A comparative analysis of characteristics of detector structures fabricated by means of technology of epitaxial growth of an undoped high-resistive GaAs layer as well as structures based on SI-GaAs compensated with Cr during a diffusion process is presented in this work. Advantages and disadvantages of the proposed methods of formation of high-resistive layers, their electrophysical characteristics and properties are examined. Limit parameters of the detector structures which can be achieved by using a combination of technological methods are analyzed.
Keywords :
X-rays , SI-GaAs , Deep impurities , Ionizing detectors
