Title of article
Silicon carbide: fundamentals
Author/Authors
Iwami، نويسنده , , Motohiro، نويسنده ,
Pages
6
From page
406
To page
411
Abstract
Fundamental issues of silicon carbide, i.e., characteristics, crystal growth, doping of impurity atoms, metal-SiC contacts, electronic devices, etc., are given. Applications for the detection of energetic particles are also shown.
Keywords
Physical Properties , Diodes , Transistors , SiC crystals
Journal title
Astroparticle Physics
Record number
2016130
Link To Document