Title of article
The progress of SR study on the passivation of semiconductor surface in NSRL
Author/Authors
Xu، نويسنده , , P.S. and Zhang، نويسنده , , F.P. and Lu، نويسنده , , E.D. and Xu، نويسنده , , F.Q. and Pan، نويسنده , , H.B. and Zhang، نويسنده , , X.Y.، نويسنده ,
Pages
3
From page
1202
To page
1204
Abstract
A new sulfur passivation method for GaAs by using CH3CSNH2 has been developed. Its passivation mechanics have been studied. The sulfide passivation layer can prevent deposited Mg and Fe from diffusing into or reacting with GaAs substrate. It is illustrated that sulfur passivation is beneficial to the enhancement of the magnetism of Fe overlayer on GaAs surface.
Keywords
Sulfur passivation , Interface , Photoemission , magnetism , Synchrotron radiation , III–V semiconductor
Journal title
Astroparticle Physics
Record number
2016824
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