Author/Authors :
Xu، نويسنده , , P.S. and Zhang، نويسنده , , F.P. and Lu، نويسنده , , E.D. and Xu، نويسنده , , F.Q. and Pan، نويسنده , , H.B. and Zhang، نويسنده , , X.Y.، نويسنده ,
Abstract :
A new sulfur passivation method for GaAs by using CH3CSNH2 has been developed. Its passivation mechanics have been studied. The sulfide passivation layer can prevent deposited Mg and Fe from diffusing into or reacting with GaAs substrate. It is illustrated that sulfur passivation is beneficial to the enhancement of the magnetism of Fe overlayer on GaAs surface.
Keywords :
Sulfur passivation , Interface , Photoemission , magnetism , Synchrotron radiation , III–V semiconductor
