Title of article
Study of local strain distribution in semiconductor devices using high-resolution X-ray microbeam diffractometry
Author/Authors
Yokoyama، نويسنده , , K. and Takeda، نويسنده , , S. and Urakawa، نويسنده , , M. and Tsusaka، نويسنده , , Y. and Kagoshima، نويسنده , , Y. and Matsui، نويسنده , , J. and Kimura، نويسنده , , S. and Kimura، نويسنده , , H. and Kobayashi، نويسنده , , K. and Ohhira، نويسنده , , T. and Izumi، نويسنده , , K. and Miyamoto، نويسنده , , N.، نويسنده ,
Pages
4
From page
1205
To page
1208
Abstract
High-resolution X-ray diffraction has been carried out by using a vertically and horizontally condensed X-ray microbeam at the Hyogo beamline (BL24XU) of SPring-8. The microbeam is 7×5 μm2 in size and it possesses a small angular divergence and a narrow energy bandwidth. The sample is a Si substrate on which thermal oxide films are fabricated with fine patterns. At the region of the line-and-space pattern, many periodic peaks lying along the transverse direction are observed in a reciprocal space map. Those patterns are attributed to some local strain distribution due to the patterned oxide film on the Si wafer.
Keywords
X-ray microbeam , Asymmetric Bragg reflection , High-resolution microbeam diffraction , Reciprocal space map , strain distribution
Journal title
Astroparticle Physics
Record number
2016827
Link To Document