Author/Authors :
Hanamoto، نويسنده , , K. and Hirai، نويسنده , , A. and Sasaki، نويسنده , , M. and Kimura، نويسنده , , Y. and Miyatani، نويسنده , , Asok K. and Kaito، نويسنده , , Itsuki C. and Nakayama، نويسنده , , Y.، نويسنده ,
Abstract :
The effect of SR irradiation on the crystal growth of indium oxide films prepared by electron-beam evaporation have been studied by X-ray diffraction and high-resolution electron microscopy. An as-deposited film showed In2O3 crystallites with a size of 2–10 nm. The crystallites were destroyed by SR irradiation under oxygen flow. SR irradiation without oxygen flow showed the growth of In2O3 crystallites up to 20 nm in size with accompanying deoxidation and indium-particle growth. The as-deposited film was composed of variously oriented particles. Periodic oxygen decomposition of the film preferentially took place on the (0 0 1)-oriented particle.
Keywords :
High-resolution electron microscopy , Thin film , Irradiation , In2O3 , crystallization
