Title of article
Czochralski growth and scintillation properties of Bi4Si3O12 (BSO) single crystal
Author/Authors
Hua، نويسنده , , Jian-jiang and Kim، نويسنده , , H.J. and Rooh، نويسنده , , Gul and Park، نويسنده , , H. and Kim، نويسنده , , Sunghwan and Cheon، نويسنده , , JongKyu، نويسنده ,
Pages
4
From page
73
To page
76
Abstract
We have successfully grown crack free BSO (Bi4Si3O12) single crystal using Czochralski pulling technique. A detailed description of the crystal growth procedure and the solutions of the difficulties during the growth process are presented. Results of X-ray diffraction (XRD) showed a single phase of the grown crystal. Photoluminescence and X-rays induced emission spectrum showed a broad emission band in the wavelength range from 350 to 650 nm. The energy resolution for 662 keV gamma rays is measured to be 22% (FWHM) at room temperature. We measured a light output of 1400 photons/MeV for absorbed γ-ray energy. The decay time spectrum contained three components of 2.2 ns (2%), 78.4 ns (42%) and 125.6 ns (56%) at room temperature.
Keywords
BSO , Crystal scintillator , Energy resolution , Czochralski , Luminescence
Journal title
Astroparticle Physics
Record number
2016946
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