A very simple method to measure the input capacitance and the input current of transistors

We describe a method to measure the gate capacitance and the gate current of transistors at any temperature and at any operating condition. Discrimination between the total input capacitance and transfer reverse capacitance (gate to drain capacitance) is also possible with high accuracy. With this data the optimization of the signal to noise ratio and power dissipation can be achieved in the design of the front-end electronics for nuclear applications.