Title of article
Characterisation of “n-in-p” pixel sensors for high radiation environments
Author/Authors
Tsurin، نويسنده , , I. and Affolder، نويسنده , , A. and Allport، نويسنده , , P.P. and Casse، نويسنده , , G. and Chmill، نويسنده , , V. and Huse، نويسنده , , T. and Wormald، نويسنده , , M.، نويسنده ,
Pages
5
From page
140
To page
144
Abstract
This work presents the first held at Liverpool University measurements of pixel sensors with n-type readout implant in the p-type bulk before and after irradiation of samples by 24 GeV protons to doses 7×1015 and 1.5×1016 protons/cm2. A comparison is given for two measurement techniques; one based on the FE-I3 readout chip designed for the ATLAS and the other using the Beetle chip developed for the LHCb experiments at CERN.
Keywords
Pixel detector , ATLAS upgrade
Journal title
Astroparticle Physics
Record number
2017234
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