Performance of novel materials for radiation detection: Tl3AsSe3, TlGaSe2, and Tl4HgI6

In this paper we report on the electrical characteristics of three novel ternary compounds, Tl3AsSe3 (TAS), TlGaSe2 (TGS), and Tl4HgI6 (THI), pertaining to their use as radiation detectors. The details for growth and material characterization are not presented. A semiconductor based gamma ray detector requires a material with high Z, high density, high resistivity, appropriate bandgap (1.5–2 eV), low energy/electron–hole pair, and a high μτ product. CZT is currently the best semiconductor material for room temperature gamma ray spectroscopy; however, it is extremely difficult to produce large volumes of detector grade material, making it expensive and in limited supply. DNDO/DHS began searching for other materials that might perform as well as CZT but be easier to grow and in the end lower the cost. For this purpose, we investigated the above three materials as possible replacements for CZT as gamma ray detectors. The bulk resistivity, I–V curves, X-ray response, and gamma ray response measurements for doped and undoped crystals are presented and discussed. TAS shows good X-ray and gamma ray response, but has poor resistivity, which results in large dark current and poor spectral response. TGS has good resistivity, but shows poor X-ray and gamma ray response. THI has excellent resistivity, shows some X-ray and gamma ray response, and has great potential as a gamma ray detector.