Radiation-induced defects in oxygen-enriched silicon detector materials

A brief review of the influence of oxygen-enrichment on the damage parameters of silicon detectors is given, highlighting important conclusions for detector operation in high-energy physics radiation environments. With this background, defect spectroscopy data is presented for oxygen-rich detector materials using deep-level transient spectroscopy, photoluminescence, and electron-paramagnetic resonance. Among other observations, a defect level at EC−0.067 eV is reported to be introduced at an enhanced rate in oxygen-rich material. The limitations of the spectroscopic techniques in identifying the microscopic origins for damage-induced doping changes are discussed.