Author/Authors :
Battaglia، نويسنده , , Marco and Bisello، نويسنده , , Dario and Contarato، نويسنده , , Devis and Denes، نويسنده , , Peter and Giubilato، نويسنده , , Piero and Mattiazzo، نويسنده , , Serena and Pantano، نويسنده , , Devis and Zalusky، نويسنده , , Sarah، نويسنده ,
Abstract :
This paper presents the results of the characterisation of a pixel sensor manufactured in 0.2 μ m SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution.
Keywords :
SOI , Particle detection , Monolithic pixel sensor , CMOS technology
