Development of integrated ΔE–E silicon detector telescope using silicon planar technology

An integrated ΔE–E silicon detector telescope using silicon planar technology has been developed. The technology developed is based on standard integrated circuit technology and involves double sided wafer processing. The ΔE and E detectors have been realized in a PIN configuration with a common buried N+ layer. Detectors with ΔE thicknesses of 10, 15 and 25 μm, and E detector with thickness of 300 μm have been fabricated and tested with alpha particles using 238Pu–239Pu dual alpha source. The performance of the detector with ΔE detector of thickness 10 μm and E detector of thickness 300 μm has been studied for identification of charged particles using 12 MeV 7Li+ ion beam on carbon target. The results of these tests demonstrate that the integrated detector telescope clearly separates the charged particles, such as alpha particles, protons and 7Li. Due to good energy resolution of the E detector, discrete alpha groups corresponding to well known states of 15N populated during the reaction could be clearly identified.