Hexagonal boron nitride epitaxial layers as neutron detector materials

Micro-strip metal–semiconductor–metal detectors for thermal neutron sensing were fabricated from hexagonal boron nitride (hBN) epilayers synthesized by metal organic chemical vapor deposition. Experimental measurements indicated that the thermal neutron absorption coefficient and length of natural hBN epilayers are about 0.00361 μm−1 and 277 μm, respectively. A continuous irradiation with a thermal neutron beam generated an appreciable current response in hBN detectors, corresponding to an effective conversion efficiency approaching ∼80% for absorbed neutrons. Our results indicate that hBN semiconductors would enable the development of essentially ideal solid-state thermal neutron detectors in which both neutron capture and carrier collection are accomplished in the same hBN semiconductor. These solid-state detectors have the potential to replace 3He gas detectors, which faces the very serious issue of 3He gas shortage.