Effect of radiation induced deep level traps on Si detector performance

The main factor, which leads to semiconductor detector degradation in high-energy physics experiments, is the introduction of lattice defects in the detector material produced by radiation. Based on the spectrum of radiation induced defects in the silicon bulk, the overview of effects and mechanisms responsible for the changes in the main detector parameters such as effective concentration of the space charge in the depleted region, space charge sign inversion, charge collection efficiency, and detector breakdown voltage are considered. Special attention is paid to the electric field distortion related with high concentration of radiation induced deep traps, which is the key question for the design of detectors operating at cryogenic temperature. In particular, the charge collection recovery at low temperature, often refereed as the Lazarus effect, and the limitation for the detection rate related to the polarization effect are considered.