Author/Authors :
Ruggiero، نويسنده , , G and Abreu، نويسنده , , M and Bell، نويسنده , , W and Berglund، نويسنده , , P and de Boer، نويسنده , , W and Borer، نويسنده , , K and Buontempo، نويسنده , , S and Casagrande، نويسنده , , L and Chapuy، نويسنده , , S and Cindro، نويسنده , , V and Collins، نويسنده , , P and D’Ambrosio، نويسنده , , N and Da Vi?، نويسنده , , C and Devine، نويسنده , , S.R.H and Dezillie، نويسنده , , B and Dimcovski، نويسنده , , Z and Eremin، نويسنده , , V، نويسنده ,
Abstract :
Though several studies have proved the radiation tolerance of silicon detectors at cryogenic temperatures, following room temperature irradiation, no previous investigation has studied the behaviour of detectors irradiated “in situ” at low temperatures. In this work, effects of irradiation of 450 GeV protons at 83 K will be presented, showing that after a dose of 1.2×1015 p cm−2 a charge collection efficiency (CCE) of 55% is reached at 200 V before the annealing. The same results were found at the end of the irradiation, after the sample has spent more then one year at room temperature. This shows that the CCE recovery by low temperature operation is not affected by the temperature of irradiation and by the reverse annealing.
