Author/Authors :
Houdayer، نويسنده , , A and Lebel، نويسنده , , C and Leroy، نويسنده , , C and Roy، نويسنده , , P and Linhart، نويسنده , , V and Posp???il، نويسنده , , S and Sopko، نويسنده , , B and Courtemanche، نويسنده , , S and Stafford، نويسنده , , M.C، نويسنده ,
Abstract :
Silicon diodes built according to the planar MESA process are investigated for their possible use as radiation detectors. Electrical characteristics of planar MESA (PM) detectors are studied as a function of applied bias voltage and 10 MeV proton fluence in view of possible application in high-radiation environment. A comparison is made between the features of PM and silicon standard planar (SP) detectors.
Keywords :
10 , Planar MESA , Silicon detectors , MeV proton irradiation
