Title of article
High-resolution photoinduced transient spectroscopy of neutron irradiated bulk silicon
Author/Authors
Koz?owski، نويسنده , , R and Kami?ski، نويسنده , , E. and Nossarzewska-Orlowska، نويسنده , , E، نويسنده ,
Pages
6
From page
639
To page
644
Abstract
High-resolution photoinduced transient spectroscopy has been employed in a study on the formation of defects in bulk silicon due to 1 MeV neutron irradiation. Apart from divacancies in various charge states, complexes involving interstitial carbon and oxygen were revealed. The defect structure of float zone and Czochralski-grown material exposed to fluences of 2×1014 and 6.75×1014 cm−2 is compared.
Keywords
Neutron irradiation , Defect levels , pits , Irradiation defects
Journal title
Astroparticle Physics
Record number
2018181
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