Author/Authors :
M. Segneri، نويسنده , , G. and Borrello، نويسنده , , L. and DellʹOrso، نويسنده , , R. and Dutta، نويسنده , , S. and Fallica، نويسنده , , P.G. and Mariani، نويسنده , , M. and Messineo، نويسنده , , A. and Starodumov، نويسنده , , A. and Teodorescu، نويسنده , , L. and Tonelli، نويسنده , , G. and Valvo، نويسنده , , G. and Verdini، نويسنده , , P.G.، نويسنده ,
Abstract :
The paper presents the results of an extensive set of measurements performed on silicon microstrip sensors produced by STMicroelectronics for the CMS Tracker. 5″ and 6″ technologies were used to process several series of detector prototypes. Detectors 300 μm thick were produced on 5″ wafers and fully characterized. A new design on 500 μm thick wafers with 6″ technology has been recently implemented. The performance of three different layouts has been investigated in terms of macroscopic electrical parameters and radiation resistance.
Keywords :
LHC , CMS , Silicon detectors , sensor design , Radiation damage
