Author/Authors :
Dutta، نويسنده , , S. and Berger، نويسنده , , G. and Borrello، نويسنده , , L. and Buffini، نويسنده , , A. and Busoni، نويسنده , , S. and Civinini، نويسنده , , C. and DʹAlessandro، نويسنده , , R. and Gregoire، نويسنده , , Gh. and DellʹOrso، نويسنده , , R. and Lenzi، نويسنده , , M. and Meschini، نويسنده , , M. and Messineo، نويسنده , , A. and Segneri، نويسنده , , G. and Starodumov، نويسنده , , A. and Tonelli، نويسنده , , G. and Verdi، نويسنده ,
Abstract :
This paper investigates the performance of 500 μm thick silicon microstrip detectors before and after heavy irradiation. Prototype sensors, produced by STMicroelectronics, have been extensively studied using laboratory measurements, a radioactive source and a beam of minimum ionising particles. The comparison with a standard 300 μm sensor shows that the collected charge in thick devices scales linearly with thickness. By over-depleting the irradiated devices, the pre-irradiated charge collection efficiency is fully recovered. The measured noise is in good agreement with expectations. Although more work is needed, the paper shows that 500 μm thick devices are a promising technology for very large tracking systems.
