Parasitic capacitances in thick-substrate silicon microstrip detectors

In this paper, a TCAD-based analysis of unconventional-geometry microstrip radiation detectors is discussed. In particular, thick-substrate and large-pitch devices, recently suggested for the adoption in outer layers of particle tracking systems have been considered. Correlation among parasitic capacitance and geometrical features is discussed, providing intuitive interpretation for experimentally observed behaviors. Influence of the substrate thickness on depletion voltage is discussed, and dependence of detector performance on the width/pitch ratio is taken into account as well, providing a complete picture of the behavior of thick-substrate devices, in view of their future use in LHC experiments.