Title of article
Observation of radiation induced latchup in the readout electronics of NA50 multiplicity detector
Author/Authors
Alessandro، نويسنده , , B and Beolé، نويسنده , , S and Bonazzola، نويسنده , , G and Crescio، نويسنده , , E and De Witt، نويسنده , , J and Giubellino، نويسنده , , P and Idzik، نويسنده , , M and Marzari–Chiesa، نويسنده , , A and Masera، نويسنده , , M and Prino، نويسنده , , F and Ramello، نويسنده , , L and Mendes، نويسنده , , P.Rato and Riccati، نويسنده , , L and Sitta، نويسنده , , M، نويسنده ,
Pages
7
From page
758
To page
764
Abstract
During the data taking of the NA50 experiment, the CMOS digital pipeline chips (CDP) used for the readout of the multiplicity detector were exposed to high levels of radiation resulting in an ionizing radiation dose of more than 200 krad and displacement damage equivalent to 1 MeV neutron fluence of more than 5×1011 eq. neutrons cm−2. Some of these chips showed anomalies of behaviour which we attribute to radiation induced latchup phenomena. Here we present the analysis of the data taken during the 1996, 1998 and 1999 ion runs together with the results of measurements performed in the laboratory.
Keywords
Latchup , microelectronics , Radiation effects , Nuclear electronics , Radiation tolerant electronics
Journal title
Astroparticle Physics
Record number
2018226
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