Title of article
DEPFET—a pixel device with integrated amplification
Author/Authors
Neeser، نويسنده , , W and Bِcker، نويسنده , , M and Buchholz، نويسنده , , P and Fischer، نويسنده , , P and Holl، نويسنده , , P and Kemmer، نويسنده , , J and Klein، نويسنده , , P and Koch، نويسنده , , H and Lِcker، نويسنده , , M and Lutz، نويسنده , , G and Matthنy، نويسنده , , H and Strüder، نويسنده , , L and Trimpl، نويسنده , , M and Ulrici، نويسنده , , J and Wermes، نويسنده , , N، نويسنده ,
Pages
8
From page
129
To page
136
Abstract
In the DEPFET pixel concept, the absorbed radiation directly modulates the channel current of a p-JFET transistor being integrated into a fully depleted high ohmic silicon substrate in every pixel cell, offering very low noise operation at room temperature. Hence, DEPFET pixels open new possibilities in biomedical applications, but also have a potential in particle physics and astrophysics. Second prototype 50 μm×50 μm single pixels as well as large (64×64) DEPFET matrices have been successfully produced and operated confirming the low noise behavior (12e). Device studies as well as a full DEPFET pixel Bioscope system to be used in real-time digital autoradiography with excellent spatial and energy resolution for X-rays are presented.
Keywords
low noise , Active pixel sensor , DEPFET matrix , Digital autoradiography , Integrated amplification
Journal title
Astroparticle Physics
Record number
2018259
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