Title of article
Simulation of displacement damage for silicon avalanche photo-diodes
Author/Authors
K?l?ç، نويسنده , , Adnan and Piliçer، نويسنده , , Ercan and Tapan، نويسنده , , ?lhan and ?zmutlu، نويسنده , , Emin N.، نويسنده ,
Pages
3
From page
70
To page
72
Abstract
The silicon avalanche photo-diodes (APDs) in the CMS barrel electromagnetic calorimeter will be exposed to an integrated neutron fluence of about 2 × 10 13 n / cm 2 over 10 years of operation. High neutron fluences change the electrical properties of silicon detectors. The changes are proportional to the non-ionising energy loss in the APDs. Using the Geant4 toolkit, we have calculated the non-ionising energy loss as well as the rate of generation of primary defects in the APDs, for the expected neutron fluence.
Keywords
Avalanche Photo-diode , Radiation damage , GEANT4 simulation
Journal title
Astroparticle Physics
Record number
2018400
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