Title of article :
First results in micromapping the sensitivity to SEE of an electronic device in a SOI technology at the LNL IEEM
Author/Authors :
Mattiazzo، نويسنده , , S. and Bisello، نويسنده , , D. and Giubilato، نويسنده , , P. and Kaminsky، نويسنده , , A. and Pantano، نويسنده , , D. and Silvestrin، نويسنده , , L. and Tessaro، نويسنده , , M. and Wyss، نويسنده , , J.، نويسنده ,
Pages :
4
From page :
125
To page :
128
Abstract :
In this paper we review on radiation tolerance studies on a Monolithic Pixels Detector fabricated in a commercial Silicon On Insulator (SOI) technology and we report on the first application of Ion Electron Emission Microscopy to obtain a micrometric map of its sensitivity to Single Event Upset.
Keywords :
Monolithic Pixel Sensors , Single event upset , Ion electron emission microscopy
Journal title :
Astroparticle Physics
Record number :
2018416
Link To Document :
https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2018416
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