Author/Authors :
Bechevet، نويسنده , , D and Glaser، نويسنده , , M and Houdayer، نويسنده , , A and Lebel، نويسنده , , C and Leroy، نويسنده , , C and Moll، نويسنده , , M and Roy، نويسنده , , P، نويسنده ,
Abstract :
Standard planar silicon detectors of 2 kΩ cm resistivity were irradiated with 7–10 MeV protons up to fluences of 7×1013 p/cm2. The effects of proton irradiation on the effective doping concentration (Neff) and leakage current (Ivol) as a function of fluence were investigated. The evolution of Neff and Ivol as a function of time after irradiation was obtained by heating the detectors to accelerate their ageing. Comparison is done with detectors of the same type irradiated with 24 GeV/c protons. The hardness factors for 7–10 MeV protons are extracted.
Keywords :
Silicon detectors , Detectors ageing , Standard planar silicon diodes , Radiation hardness factors , Low energy proton irradiation
