On the behavior of ion implanted silicon strip detectors in high intensity low energy heavy ion beam experiments

In a recent investigation of the development of leakage currents in Silicon Strip Detectors used in experiments with high intensity stable beams, anomalous behavior was observed. Over a very short period of time the leakage current rose to levels that could be damaging to the detectors. A discussion of this evidence and how the problem was solved, with a viable model, will be given, leading to guidelines for use of such detectors in a stable beam environment.