Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons, protons and pions

Silicon diodes fabricated on oxygenated and non-oxygenated silicon wafers with different bulk resistivities (1, 2 and 15 kΩ cm) were irradiated with neutrons, pions and protons to fluences up to 2.4×1014 n/cm−2. Effective trapping times for electrons and holes were determined by the charge correction method in the temperature range between −50°C and 20°C. The measured effective trapping probabilities scale linearly with fluence and decrease with increasing temperature. Irradiation with charged hadrons resulted in about 30% higher trapping probabilities than with neutrons at the same equivalent fluence. No dependence on silicon resistivity and oxygen concentration was found. The temperature dependence could be parameterized by a power-law scaling. Accelerated annealing at 60°C showed a 30% increase of hole trapping, measured at 10°C, and a decrease by about the same amount for electron trapping, both at a time scale of 10 h.