Bias influence on ionizing radiation effects for 3CG130 PNP bipolar junction transistors

In order to evaluate the influence of bias conditions on ionizing radiation effects for PNP bipolar junction transistors (BJTs), the 110 keV electronsʹ irradiations were performed and different electrical parameters were measured in-situ for 3CG130 PNP BJTs with different bias conditions during the exposure. Based on the experimental results, it is clear that the bias condition affects the ionization damage level on PNP BJTs, which is caused by 110 keV electronsʹ irradiations. The PNP transistors under reverse/forward bias of emitter–base junction exhibit greater/lower degradation than those under zero bias at a given irradiation fluence.