Author/Authors :
Lima، نويسنده , , I.B. and Mangiarotti، نويسنده , , A. and Vivaldini، نويسنده , , T.C. and Gonçalves، نويسنده , , J.A.C. and Botelho، نويسنده , , S. and Fonte، نويسنده , , P. and Takahashi، نويسنده , , J. and Tarelho، نويسنده , , L.V. and Bueno، نويسنده , , C.C.، نويسنده ,
Abstract :
In this work we present results of the first Townsend coefficient (α) in pure isobutane by measuring the current growth as a function of the electric field strength in a pulsed irradiation regime. A Resistive Plate Chamber (RPC)-like configuration was used. To validate this method, as well as to crosscheck the experimental apparatus, measurements of the α parameter were firstly carried out with pure nitrogen and the results compared to the accurate data available in the literature. The data obtained with isobutane in a field range from 145 Td up to 200 Td were well-matched to those calculated with Magboltz versions 2.7.1 and 2.8.6. The experimental consistency of these results with other published data in the range of 550–1300 Td was very good, as demonstrated by the use of the Korff parameterization.
Keywords :
Isobutane , First Townsend coefficient , Electron transport parameters , Nitrogen
