Author/Authors :
Battaglia، نويسنده , , Marco and Bisello، نويسنده , , Dario and Celestre، نويسنده , , Richard and Contarato، نويسنده , , Devis and Denes، نويسنده , , Peter and Mattiazzo، نويسنده , , Serena and Tindall، نويسنده , , Craig، نويسنده ,
Abstract :
This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-on-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a low energy phosphorus implantation is performed on the back-plane. The response to X-rays from 2.12 to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source.
Keywords :
Monolithic pixel sensor , SOI , CMOS technology , x-ray detection
