Author/Authors :
Ma، نويسنده , , Lei and Yang، نويسنده , , Weiguang and Wang، نويسنده , , YaLi and Liu، نويسنده , , Gonglong and Chen، نويسنده , , Liangliang and Tang، نويسنده , , Ke and Wang، نويسنده , , Linjun and Shi، نويسنده , , Weimin، نويسنده ,
Abstract :
Different α-HgI2 seed layers were prepared by vertical deposition method through varying reactive solution concentrations. Polycrystalline α-HgI2 films were grown on the α-HgI2 seed layer by the hot wall vapor phase deposition (HWPVD) method. The orientation along the (001) direction and compactness of the polycrystalline α-HgI2 films are significantly enhanced as compared to that without a seed layer. The polycrystalline α-HgI2 films grown on a three-deposit seed layer show improved electrical properties.
Keywords :
HgI2 , Seed layers , UV–vis spectra , Polycrystalline
